npn bdy57 C BDY58 09/11/2012 comset semiconductors 1 | 3 silicon transistors, diffused mesa the bdy57 and BDY58 are mounted in to - 3 metal package. lf large signal power amplification high current fast switching. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector - emitter voltage bdy57 80 v BDY58 125 v cbo collector - base voltage bdy57 120 v BDY58 160 v ebo emitter - base voltage 10 v i c collector current 25 a i b base current 6 a p tot power dissipation @ tc = 25 175 w t j ts junction temperature storage temperature - 65 to +200 c thermal characteristics symbol ratings value unit r thj - c thermal resistance, junction to case 1 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn bdy57 C BDY58 09/11/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ m a x unit v ceo(sus) collector - emitter breakdown voltage (*) i c =100 ma, i b =0 bdy57 80 - - v BDY58 125 - - v (br)cbo collector - base breakdown voltage (*) i c =5.0ma, i e =0 bdy57 120 - - v BDY58 160 - - v (br)ebo emitter - base breakdown voltage (*) i e =5.0 a, i c =0 bdy57 - 0.5 1.4 v BDY58 i cbo collector - base cutoff current v cb =120 v, i e =0 v bdy57 - - 1.0 ma BDY58 - - 0.5 i cer collector - emitter cutoff current v ce =80 v, r be =10 t case =100c bdy57 - - 10 ma BDY58 i ebo emitter - base cutoff current v eb =10 v, i c =0 v bdy57 - 0.25 0.5 ma BDY58 v ce(sat) collector - emitter saturation voltage (*) i c =10 a, i b =1.0 a bdy57 - 0.5 1.4 v BDY58 h 21e static forward current transfer ratio (*) v ce =4 v, i c =10 a bdy57 20 - 60 v BDY58 v ce =4 v, i c =20 a bdy57 - 15 - BDY58 v ce =4 v, i c =10 a t case = - 30c bdy57 10 - - BDY58 f t transition frequency v ce =15 v, i c =1.0 a f=10 mhz bdy57 10 30 - mhz BDY58 t d + tr turn - on time i c =15 a, i b =1.5 a bdy57 - 0.25 1 s BDY58 t s + tf turn - off time i c =15 a, i b1 =1.5 a i b2 = - 1.5 a bdy57 - 1 2 s BDY58 (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn bdy57 C BDY58 09/11/2012 comset semiconductors 3 | 3 mechanical data case to - 3 revised october 2012 information furnished is believe d to be accurate and reliable. however, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does comset semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. comset semiconductors products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com dimensions (mm) min typ max a 11 - 13.10 b 0.97 - 1.15 c 1.5 - 1.65 d 8.32 - 8 .92 e 19 - 22 g 10.70 - 11.1 n 16.50 - 17.20 p 25 - 27,20 r 3.84 - 4.21 u 38.50 - 40.13 v 29.90 - 30.40 pin 1 : base pin 2 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
